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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF21120/D
The RF Sub-Micron MOSFET Line
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. * W-CDMA Performance @ -45 dBc, 5 MHz Offset, 15 DTCH, 1 Perch Output Power -- 14 Watts (Avg.) Power Gain -- 11.5 dB Efficiency -- 16% * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2170 MHz, 120 Watts (CW) Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters
MRF21120
2170 MHz, 120 W, 28 V LATERAL N-CHANNEL RF POWER MOSFET
CASE 375D-04, STYLE 1 NI-1230
MAXIMUM RATINGS
Rating Drain-Source Voltage Gate-Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 -0.5, +15 389 2.22 -65 to +150 200 Unit Vdc Vdc Watts W/C C C
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Class 1 (Minimum) M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.45 Unit C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 7
MOTOROLA RF Motorola, Inc. 2002 DEVICE DATA
MRF21120 1
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS (1) Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 Adc) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc ) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) ON CHARACTERISTICS (1) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) Gate Threshold Voltage (VDS = 10 V, ID = 200 A) Gate Quiescent Voltage (VDS = 28 V, ID = 500 mA) Drain-Source On-Voltage (VGS = 10 V, ID = 2 A) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2170.0 MHz, f2 = 2170.1 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2170.0 MHz, f2 = 2170.1 MHz) Intermodulation Distortion (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2170.0 MHz, f2 = 2170.1 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2170.0 MHz, f2 = 2170.1 MHz) Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2140.0 MHz, f2 = 2140.1 MHz) Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2110.0 MHz, f2 = 2110.1 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2110.0 MHz, f2 = 2110.1 MHz) Intermodulation Distortion (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2110.0 MHz, f2 = 2110.1 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2110.0 MHz, f2 = 2110.1 MHz) Gps 500 mA, 500 mA, IMD 500 mA, IRL 500 mA, Gps 500 mA, Gps 500 mA, 500 mA, IMD 500 mA, IRL 500 mA, P1dB -- 120 -- Watts -- -12 -- dB -- -31 -- dB -- 34.5 -- % -- 11.5 -- dB -- 11.5 -- dB -- -- -31 -12 -28 -9 dB dB 10.5 30 11.4 34.5 -- -- % dB Crss -- 2.8 -- pF gfs VGS(th) VGS(Q) VDS(on) -- 2.5 3 -- 4.8 3 3.9 0.38 -- 3.8 5 0.5 S Vdc Vdc Vdc V(BR)DSS IGSS IDSS 65 -- -- -- -- -- -- 1 10 Vdc Adc Adc Symbol Min Typ Max Unit
Power Output, 1 dB Compression Point (VDD = 28 Vdc, CW, IDQ = 2 500 mA, f1 = 2170.0 MHz) (1) Each side of device measured separately. (2) Device measured in push-pull configuration.
MRF21120 2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) (continued) Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 120 W CW, IDQ = 2 f1 = 2170.0 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 120 W CW, IDQ = 2 f1 = 2170.0 MHz) Gps 500 mA, 500 mA, -- 42 -- % -- 10.5 -- dB
Output Mismatch Stress (VDD = 28 Vdc, Pout = 120 W CW, IDQ = 2 500 mA, f = 2.17 GHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) (2) Device measured in push-pull configuration.
No Degradation In Output Power Before and After Test
MOTOROLA RF DEVICE DATA
MRF21120 3
VDD + C31 + C30 C28 + C17 C16 + C15 R1 Z6 Z1 COAX1 Z2 COAX2 L1 Z5 C1 Z7 Z9 R2 C2 Z11 L2 Z13 C4 Z15 Z17 Z19 R6 Z21 Z23 Z25 Z27 Z29 Z31 Z33 Z35 C10 Z37 Z39 Z8 Z10 R5 Z12 C3 Z14 Z16 Z18 Z20 Z22 DUT C13 C7 Z24 Z26 L3 Z28 Z30 Z32 Z34 C9 Z36 C14 C29 C27 C12 C5 Z40 Z41 L5 Z42 C32 C33 C34 + C35 +
+
VGG + C19
B1
R3
RF OUTPUT
Z4 RF INPUT
Z38 C8 COAX3 C11 COAX4
C6 + VGG + C25 R4 C24 C23 C21 B2 C22 C20 C37 + C39
L4 + C36
C38
VDD + + C43 C44
+
+ C40
B1, B2 C1, C2, C12 C3, C4, C9, C10 C5 C6, C7 C8 C11 C13, C20, C29, C37 C14, C21, C28, C38 C15, C22, C27, C34, C36, C42 C16, C23, C33, C43 C17, C24, C32, C41 C19, C25 C30, C39 C31, C40 C35, C44 Coax1, Coax2 Coax3, Coax4 L1, L5 L2 L3, L4 R1, R2 R3, R4 R5, R6 Z1 Ferrite Beads, Fair Rite 0.6 - 4.5 pF Variable Capacitors, Johanson Gigatrim 10 pF Chip Capacitors, B Case, ATC 0.4 - 2.5 pF Variable Capacitor, Johanson Gigatrim 2.0 pF Chip Capacitors, B Case, ATC 0.5 pF Chip Capacitor, B Case, ATC 0.2 pF Chip Capacitor, B Case, ATC 5.1 pF Chip Capacitors, B Case, ATC 91 pF Chip Capacitors, B Case, ATC 22 F, 35 V Tantalum Surface Mount Chip Capacitors, Kemet 0.039 F Chip Capacitors, B Case, ATC 1000 pF Chip Capacitors, B Case, ATC 0.022 F Chip Capacitors, B Case, ATC 1.0 F, 35 V Tantalum Surface Mount Chip Capacitors, Kemet 100 F, 50 V Electrolytic Capacitors, Sprague 470 F, 63 V Electrolytic Capacitors, Sprague 25 Semi Rigid Coax, 70 mil OD, 1.05 Long 50 Semi Rigid Coax, 85 mil OD, 1.05 Long 5.0 nH Minispring Inductors, Coilcraft 8.0 nH Minispring Inductor, Coilcraft 7.15 nH Microspring Inductors, Coilcraft 1 k, 1/4 W Fixed Metal Film Resistors, Dale 270 , 1/8 W Fixed Film Chip Resistors, Dale 1.2 k, 1/8 W Fixed Film Chip Resistors, Dale 0.150 x 0.080 Microstrip Z2 Z4, Z5 Z6, Z7 Z8, Z9 Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 Z18, Z19 Z20, Z21 Z22, Z23 Z24, Z25 Z26, Z27 Z28, Z29 Z30, Z31 Z32, Z33 Z34, Z35 Z36, Z37 Z38, Z39 Z40 Z41 Z42 Board Material Connectors
C41
C42
0.320 x 0.080 Microstrip 1.050 x 0.080 Microstrip 0.120 x 0.080 Microstrip 0.140 x 0.080 Microstrip 0.610 x 0.080 Microstrip 0.135 x 0.080 Microstrip 0.130 x 0.080 Microstrip 0.300 x 0.350 Microstrip 0.150 x 0.500 Microstrip 0.075 x 0.500 Microstrip 0.330 x 0.500 Microstrip 0.100 x 0.550 Microstrip 0.175 x 0.550 Microstrip 0.045 x 0.550 Microstrip 0.190 x 0.325 Microstrip 0.080 x 0.325 Microstrip 0.515 x 0.080 Microstrip 0.020 x 0.080 Microstrip 0.565 x 0.080 Microstrip 0.100 x 0.080 Microstrip 0.470 x 0.080 Microstrip 0.100 x 0.080 Microstrip 0.03 Teflon, r = 2.55 Copper Clad, 2 oz. Cu N-Type Panel Mount, Stripline
Figure 1. 2.1 - 2.2 GHz Broadband Test Circuit Schematic MRF21120 4 MOTOROLA RF DEVICE DATA
C34
226 35K 649
C35
C19 VGG C17
C15
226 35K 649 640 50K 105
C30
C31
C32 C33 C28 C27
VDD
B1 R3 R1 C1 C2 L2 L1 R2 C3 C4
R5
C13 C7 L3 L5 C8 C9 C11 C10 C12 C5 C6 C20
226 35K 649
R6 R4 B2 C23 VGG C25 C24
L4 C36
226 35K 649
C21 C22
C37 C39 C38 C40
226 35K 649 640 50K 105
226 35K 649
C16 C14
C29
C41 C43
VDD
C42
C44
Figure 2. 2.1 - 2.2 GHz Broadband Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
MRF21120 5
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) 14 13 Gps , POWER GAIN (dB) 12 11 -20
1800 mA 1500 mA 1300 mA 1100 mA 1000 mA 850 mA VDD = 28 Vdc f1 = 2170.0 MHz f2 = 2170.1 MHz 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 100
-30 1800 mA 850 mA 1100 mA 1000 mA VDD = 28 Vdc f1 = 2170.0 MHz f2 = 2170.1 MHz
-40 600 mA -50
1500 mA 1300 mA
10 600 mA 9 0.10
-60 0.10
1.0 10 100 Pout, OUTPUT POWER (WATTS) PEP
Figure 3. Power Gain versus Output Power
Figure 4. Intermodulation Distortion versus Output Power
50 45 40 35
Ref Lv1 -5 dBm MARKER 1 [T1] -22.77 dBm 2.17000000 GHz 1 RBW VBW SWT 1 [T1] 30 kHZ 1 MHz 2s RF Att Unit 10 dB dBm
A
12 Gps , POWER GAIN (dB) 11 10 9 8 7 6 5 2100 2120
Gps
IMD, INTERMODULATION , EFFICIENCY (%) DISTORTION (dBc)
13
-10 -20 -30 -40 2.0 VSWR -50 -60 -70 -80 -90 1.0 -100
Center 2.17 GHz c11 c11 c0 1.5 MHz
VDD = 28 Vdc, IDQ = 2 x 500 mA Two-Tone, 100 kHz Tone Spacing VSWR
-22.77 dBm 2.17000000 GHz -2.95 dBm CH PWR -45.14 dB ACR UP -45.45 dB ACR LOW
1RM
-24 -26 -28
1.5
IMD 2160 2140 f, FREQUENCY (MHz) 2180
-30 -32 2200
c0
cu1
cu1 Span 15 MHz
Figure 5. Class AB Broadband Circuit Performance
Figure 6. 2.17 GHz W-CDMA Mask at 14 Watts (Avg.), 5 MHz Offset, 15 DTCH, 1 Perch
60 13 , EFFICIENCY (%) ACPR (dB) 12 Gps , POWER GAIN (dB) 11 10 9 8 7 6 5 0.10 1.0 IMD VDD = 28 Vdc, IDQ = 2 x 500 mA f = 2170.0 MHz, f2 = 2170.1 MHz Gps 80 60 40 20 0 , EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc)
14 Gps 12 Gps , POWER GAIN (dB) 10 8 6 4 ACPR DOWN 2 VDD = 28 Vdc IDQ = 2 x 750 mA f = 2170 MHz ACPR UP 1.0 10
40 20 0 -20 -40 -60
-20 -40 -60 10 100 -80
Pout, OUTPUT POWER (WATTS) AVG.
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain, Efficiency, ACPR versus Output Power (W-CDMA)
Figure 8. Power Gain, Efficiency, IMD versus Output Power
MRF21120 6
MOTOROLA RF DEVICE DATA
f = 2170 MHz Zsource
2110 MHz Zload
Zo = 10
2110 MHz
f = 2170 MHz
VDD = 28 V, IDQ = 2 f MHz 2110 2140 2170
500 mA, Pout = 120 W PEP Zload 4.9 + j2.8 5.1 + j2.7 5.2 + j2.5
Zsource 3.7 + j2.0 3.5 + j2.4 3.1 + j2.5
Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration.
Input Matching Network
+
Device Under Test
-
Output Matching Network
Z source Z
+ load
Figure 9. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF21120 7
PACKAGE DIMENSIONS
2X
Q bbb
M
A
A G4 L
1 2
TA
M
B
M
B
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.52 (38.61) BASED ON M3 SCREW. DIM A B C D E F G H K L M N Q R S aaa bbb ccc INCHES MIN MAX 1.615 1.625 0.395 0.405 0.150 0.200 0.455 0.465 0.062 0.066 0.004 0.007 1.400 BSC 0.079 0.089 0.117 0.137 0.540 BSC 1.219 1.241 1.218 1.242 0.120 0.130 0.355 0.365 0.365 0.375 0.013 REF 0.010 REF 0.020 REF DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 41.02 41.28 10.03 10.29 3.81 5.08 11.56 11.81 1.57 1.68 0.10 0.18 35.56 BSC 2.01 2.26 2.97 3.48 13.72 BSC 30.96 31.52 30.94 31.55 3.05 3.30 9.01 9.27 9.27 9.53 0.33 REF 0.25 REF 0.51 REF
3
4
B
(FLANGE)
4X
K aaa
M
4X
D TA
M
B
M
ccc
M
M
TA R
(LID)
M
B
M
ccc
M
TA N (LID)
B
M
H C
F
S
(INSULATOR)
E
PIN 5 T M (INSULATOR) bbb
M
SEATING PLANE
bbb
M
TA
M
B
M
TA
M
B
M
CASE 375D-04 ISSUE C NI-1230
STYLE 1: PIN 1. 2. 3. 4. 5.
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu. Minato-ku, Tokyo 106-8573 Japan. 81-3-3440-3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852-26668334 Technical Information Center: 1-800-521-6274 HOME PAGE: http://www.motorola.com/semiconductors/
MRF21120 8
MOTOROLA RF DEVICE MRF21120/D DATA

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